DST3946DPJ document number: ds32040 rev. 1 - 2 1 of 9 www.diodes.com january 2010 ? diodes incorporated DST3946DPJ complementary npn/pnp s urface mount transistor features ? epitaxial planar die construction ? ideally suited for automated assembly processes ? lead, halogen and antimony free, rohs compliant (note 1) ? "green" device (note 2) ? ultra small package mechanical data ? case: sot-963 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.0027 grams (approximate) ordering information (note 5) device packaging shipping DST3946DPJ-7 sot-963 10,000/tape & reel notes: 1. no purposefully added lead. halogen and antimony free. 2. diodes inc?s ?green? policy can be found on our website at http://www.diodes.com marking information device schematic 6 q1 q2 5 4 3 1 2 top view sot-963 t9 = product type marking code t9
DST3946DPJ document number: ds32040 rev. 1 - 2 2 of 9 www.diodes.com january 2010 ? diodes incorporated DST3946DPJ maximum ratings - npn (q1) @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current ? continuous i c 200 ma maximum ratings - pnp (q2) @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5.0 v collector current - continuous i c -200 ma thermal characteristics characteristic symbol value unit power dissipation (note 3) p d 300 mw thermal resistance, junction to ambient (note 3) r ja 417 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 3. device mounted on fr-4 pcb with minimum recommended pad layout.
DST3946DPJ document number: ds32040 rev. 1 - 2 3 of 9 www.diodes.com january 2010 ? diodes incorporated DST3946DPJ 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 1 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 370c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.1 0.00001 0.001 0.1 10 1,000 fig. 2 single pulse maximum power dissipation t , pulse duration time (s) 1 1 10 100 1,000 p (pk), p eak t r a n sie n t p o we r (w) 0.1 single pulse t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 370c/w ja ja 0 0.1 0.2 0.3 0.4 0 20 40 60 80 100 120 140 160 t , ambient temperature ( c) a fig. 3 power dissipation vs. ambient temperature p , p o we r dissi p a t i o n (w) d note 3
DST3946DPJ document number: ds32040 rev. 1 - 2 4 of 9 www.diodes.com january 2010 ? diodes incorporated DST3946DPJ electrical characteris tics - npn (q1) @t a = 25c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v ( br ) cbo 60 ? v i c = 10 a, i e = 0 collector-emitter breakdown voltage (note 4) v ( br ) ceo 40 ? v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v ( br ) ebo 6.0 ? v i e = 10 a, i c = 0 collector cutoff current i cex ? 50 na v ce = 30v, v eb ( off ) = 3.0v base cutoff current i bl ? 50 na v ce = 30v, v eb ( off ) = 3.0v on characteristics (note 4) dc current gain h fe 40 70 100 60 30 ? ? 300 ? ? ? i c = 100a, v ce = 1.0v i c = 1.0ma, v ce = 1.0v i c = 10ma, v ce = 1.0v i c = 50ma, v ce = 1.0v i c = 100ma, v ce = 1.0v collector-emitter saturation voltage v ce(sat) ? 0.20 0.30 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma base-emitter saturation voltage v be(sat) 0.65 ? 0.85 0.95 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma small signal characteristics output capacitance c obo ? 4.0 pf v cb = 5.0v, f = 1.0mhz, i e = 0 input capacitance c ibo ? 8.5 pf v eb = 0.5v, f = 1.0mhz, i c = 0 input impedance h ie 1.0 10 k v ce = 10v, i c = 1.0ma, f = 1.0khz voltage feedback ratio h re 0.5 8.0 x 10 -4 small signal current gain h fe 100 400 ? output admittance h oe 1.0 40 s current gain-bandwidth product f t 300 ? mhz v ce = 20v, i c = 10ma, f = 100mhz switching characteristics delay time t d ? 35 ns v cc = 3.0v, i c = 10ma, v be(off) = - 0.5v, i b1 = 1.0ma rise time t r ? 35 ns storage time t s ? 200 ns v cc = 3.0v, i c = 10ma, i b1 = i b2 = 1.0ma fall time t f ? 50 ns notes: 4. short duration pulse test used to minimize self-heating effect. 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 01 2 3 45 v , collector-emitter voltage (v) ce fig. 4 typical collector current vs. collector-emitter voltage i, c o lle c t o r c u r r e n t (a) c i = 2ma b i = 0.2ma b i = 0.4ma b i = 0.6ma b i = 0.8ma b i = 1.6ma b i = 1.4ma b i = 1.2ma b i = 1.8ma b i = 1ma b 0.1 1 10 100 1,000 i , collector current (ma) c fig. 5 typical dc current gain vs. collector current 0 100 200 300 400 h, d c c u r r e n t g ai n fe t = -55c a t = 25c a t = 150c a t = 125c a t = 85c a v = 5v ce
DST3946DPJ document number: ds32040 rev. 1 - 2 5 of 9 www.diodes.com january 2010 ? diodes incorporated DST3946DPJ 0.1 1 10 100 1,000 i , collector current (ma) c fig. 6 typical collector-emitter saturation voltage vs. collector current 0.01 0.1 1 v, c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) t = -55c a i/i = 10 cb t = 25c a t = 125c a t = 150c a t = 85c a s 0.01 0.1 1 v, c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) 0.1 1 10 100 1,000 i , collector current (ma) c fig. 7 typical collector-emitter saturation voltage vs. collector current i/i = 20 cb t = -55c a t = 25c a t = 150c a t = 85c a t = 125c a 0.1 1 10 100 1,000 i , collector current (ma) c fig. 8 typical base-emitter turn-on voltage vs. collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v , base-emi t t e r t u r n- o n v o l t a g e (v) be(on) v = 5v ce t = 85c a t = 25c a t = -55c a t = 125c a t = 150c a 0.1 1 10 100 1,000 i , collector current (ma) c fig. 9 typical base-emitter saturation voltage vs. collector current 0.2 0.4 0.6 0.8 1.0 1. 2 v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) t = 85c a t = 25c a t = -55c a t = 125c a t = 150c a gain = 10 fig. 10 safe operation area (npn) 0.1 1 10 100 v , collector emitter current (v) ce 0.001 0.01 0.1 1 10 i, c o lle c t o r c u r r e n t (a) c dc p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 25c single, non-repetitive pulse a
DST3946DPJ document number: ds32040 rev. 1 - 2 6 of 9 www.diodes.com january 2010 ? diodes incorporated DST3946DPJ electrical characteris tics - pnp (q2) @t a = 25c unless otherwise specified characteristic symbol min max unit test condition off characteristics collector-base breakdown voltage v ( br ) cbo -40 ? v i c = -10 a, i e = 0 collector-emitter breakdown voltage (note 4) v ( br ) ceo -40 ? v i c = -1.0ma, i b = 0 emitter-base breakdown voltage v ( br ) ebo -5.0 ? v i e = -10 a, i c = 0 collector cutoff current i cex ? -50 na v ce = -30v, v eb ( off ) = -3.0v i cbo ? -50 na v ce = -30v, i e = 0 base cutoff current i bl ? -50 na v ce = -30v, v eb ( off ) = -3.0v on characteristics (note 4) dc current gain h fe 60 80 100 60 30 ? ? 300 ? ? ? i c = -100a, v ce = -1.0v i c = -1.0ma, v ce = -1.0v i c = -10ma, v ce = -1.0v i c = -50ma, v ce = -1.0v i c = -100ma, v ce = -1.0v collector-emitter saturation voltage v ce(sat) ? -0.25 -0.40 v i c = -10ma, i b = -1.0ma i c = -50ma, i b = -5.0ma base-emitter saturation voltage v be(sat) -0.65 ? -0.85 -0.95 v i c = -10ma, i b = -1.0ma i c = -50ma, i b = -5.0ma small signal characteristics output capacitance c obo ? 4.5 pf v cb = -5.0v, f = 1.0mhz, i e = 0 input capacitance c ibo ? 10 pf v eb = -0.5v, f = 1.0mhz, i c = 0 input impedance h ie 2.0 12 k v ce = 10v, i c = 1.0ma, f = 1.0khz voltage feedback ratio h re 0.1 10 x 10 -4 small signal current gain h fe 100 400 ? output admittance h oe 3.0 60 s current gain-bandwidth product f t 300 ? mhz v ce = -20v, i c = -10ma, f = 100mhz switching characteristics delay time t d ? 35 ns v cc = -3.0v, i c = -10ma, v be(off) = 0.5v, i b1 = -1.0ma rise time t r ? 35 ns storage time t s ? 225 ns v cc = -3.0v, i c = -10ma, i b1 = i b2 = -1.0ma fall time t f ? 75 ns notes: 4. short duration pulse test used to minimize self-heating effect. 0 0.04 0.08 0.12 0.16 0.20 01 2 3 45 -v , collector-emitter voltage (v) ce fig. 11 typical collector current vs. collector-emitter voltage -i , c o lle c t o r c u r r en t (a) c i = -2ma b i = -0.2ma b i = -0.4ma b i = -0.6ma b i = -0.8ma b i = -1.6ma b i = -1.4ma b i = -1.2ma b i = -1.8ma b i = -1ma b 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 12 typical dc current gain vs. collector current 0 50 100 150 200 250 300 350 400 h, d c c u r r e n t g ai n fe t = -55c a t = 25c a t = 150c a t = 125c a t = 85c a v = 5v ce
DST3946DPJ document number: ds32040 rev. 1 - 2 7 of 9 www.diodes.com january 2010 ? diodes incorporated DST3946DPJ 1 10 100 1,000 -i , collector current (ma) c fig. 13 typical collector-emitter saturation voltage vs. collector current 0.01 0.1 1 -v , c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) t = -55c a i/i = 10 cb t = 25c a t = 125c a t = 150c a t = 85c a 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 14 typical collector-emitter saturation voltage vs. collector current 0.01 0.1 1 -v , c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) t = -55c a i/i = 20 cb t = 25c a t = 125c a t = 150c a t = 85c a 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 15 typical base-emitter saturation voltage vs. collector current 0.2 0.4 0.6 0.8 1.0 1. 2 -v , base-emi t t e r t u r n- o n v o l t a g e (v) be(on) t = 85c a t = 25c a t = -55c a t = 125c a t = 150c a gain = 10 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 16 typical base-emitter saturation voltage vs. collector current 0.2 0.4 0.6 0.8 1.0 1. 2 -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) t = 85c a t = 25c a t = -55c a t = 125c a t = 150c a gain = 10 fig. 17 safe operation area (pnp) 0.001 0.01 0.1 1 10 0.1 1 10 100 -v , collector emitter current (v) ce -i , c o lle c t o r c u r r en t (a) c dc p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 25c single, non-repetitive pulse a
DST3946DPJ document number: ds32040 rev. 1 - 2 8 of 9 www.diodes.com january 2010 ? diodes incorporated DST3946DPJ package outline dimensions suggested pad layout sot-963 dim min max typ a 0.40 0.50 0.45 a1 0 0.05 - c 0.120 0.180 0.150 d 0.95 1.05 1.00 e 0.95 1.05 1.00 e1 0.75 0.85 0.80 l 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 typ e1 0.70 typ all dimensions in mm dimensions value (in mm) c 0.350 x 0.200 y 0.200 y1 1.100 l c e d e1 e e1 b (6 places) a a1 y1 y (6x) c c x (6x)
DST3946DPJ document number: ds32040 rev. 1 - 2 9 of 9 www.diodes.com january 2010 ? diodes incorporated DST3946DPJ important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2009, diodes incorporated www.diodes.com
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